A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories

摘要

In this work, we show that a detailed atomistic model of SiN defects provides a consistent explanation of the program/erase/retention characteristics of both NROM and MANOS charge-trap cells. Our analysis of devices with SiN layers of different stoichiometry is also consistent with original KFM measurements of trapped charge drift in SiN layers.