An accurate prediction of the gain and index of semiconductor lasers is necessary to optimize device performance characteristics. The coupling between gain and index changes induced by the carrier concentration, for example, is critical to understanding and predicting the laser beam-quality and filamentation phenomena. A measure of this coupling is the antiguiding parameter, or the linewidth broadening factor that is defined in the following relationship: equations where n is the index of refraction of the active region, g is the intensity gain per unit length and N is the carrier density.
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