Doherty power amplifier and GaN technology

摘要

In this paper, the features of GaN HEMT technology and Doherty Power Amplifier architecture will be investigated, as a possible answer for the stringent requirements of the next generation of wireless systems. In particular, the attention will be focused on the capabilities and the relevant drawbacks of a GaN HEMT technology when designing DPAs. The discussion of the most important DPA's design aspects will be done through the presentation of several hybrid prototypes. Experimental results will be also given to support the theoretical aspects.