Ka-band MMIC GaN Doherty Power Amplifiers: Considerations on Technologies and Architectures

摘要

This paper presents a comparison of two sample GaN technologies, one on Silicon and the other on Silicon Carbide substrate, when applied to the design of an integrated Doherty power amplifier. Two different target applications are considered, namely the satellite Ka-band downlink (17.3-20.3 GHz) and terrestrial communications in the n257 FR2 5G band (26.5-29.5 GHz), with different specifications but similar absolute frequency range. Considerations are made highlighting advantages and disadvantages of the two technologies for the design of high frequency MMIC Doherty Power Amplifiers in the presented scenarios.