A Novel Depletion Mode High Voltage Isolation Device

摘要

A novel depletion mode high voltage isolation device is presented. It consists of a narrow n- resistor covered with a grounded metal field plate. This device will pass low voltages, but will block high voltages. It has potential application to isolate a NAND memory array from periphery low voltage circuitry, and has the benefit that it can be made more compact than a standard MOSFET device and can be integrated into the process without adding or changing process steps.