Total Dielectric Isolation (TDI) of Fully Depleted Device Structures

摘要

The aim of this programme is to prepare, evaluate and optimise Total DielectricIsolated (TDI) structures in order to develop the technology for the preparation of substrates for circuits which exhibit improved radiation tolerance. The work carried out during the life of this project has provided a sound base for this novel technology. Successful experiments include the preparation of device worthy substrates in variously patterned wafers, identification of the microstructure of TDI wafers by cross-sectional transmission electron microscopy (XTEM), and the successful implementation of a new predictive software package (IRIS). This SIMOX process model has been used to optimise the masking layer thicknesses and processing parameters to achieve planar TDI structures. (Author)