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A robust and low power dual data rate (DDR) flip-flop using c-elements

机译:使用c元件的强大,低功耗双数据速率(DDR)触发器

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To maintain the performance of digital systems, while reducing the energy consumption, implementation of dual edge flip flops has recently become the focus of many researchers. This paper presents a new robust and low power dual edge flip-flop using c-elements. Unlike the existing dual data rate (DDR) flip flops [1-4], the proposed circuit uses the direct clock pulses to latch the data, without a need for additional pulse generator circuitry for the clock signal, which lowers the clock dynamic power consumption by factor of 2×. Moreover, because of its simplicity with very low transistor count, it provides a more robust solution for DDR flip-flops. In comparison with ep-DSFF (explicit-pulsed static hybrid flop) [1] at 45 nm CMOS process, the proposed DDR-FF consumes 32% less power, with 12% less C2Q delay. The power-delay product of the proposed DDR-FF is 41% better than its counterpart, ep-DSFF. The proposed DDR-FF uses only 24 transistors and can easily be implemented into the cell libraries for high performance and low power ASIC design flow.
机译:为了保持数字系统的性能,同时降低能耗,双边缘触发器的实现近来已成为许多研究人员关注的焦点。本文介绍了一种使用c元素的新型稳健且低功耗双边触发器。与现有的双倍数据速率(DDR)触发器[1-4]不同,所提出的电路使用直接时钟脉冲来锁存数据,而无需为时钟信号增加脉冲发生器电路,从而降低了时钟动态功耗乘以2×。此外,由于其简单性和极低的晶体管数量,它为DDR触发器提供了更强大的解决方案。与采用45 nm CMOS工艺的ep-DSFF(显式脉冲静态混合触发器)[1]相比,拟议的DDR-FF功耗降低了32%,C2Q延迟降低了12%。拟议的DDR-FF的电源延迟产品比其对应的ep-DSFF好41%。拟议的DDR-FF仅使用24个晶体管,并且可以轻松地实现到单元库中,以实现高性能和低功耗ASIC设计流程。

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