MBE growth of high Sn-percentage GeSn alloys with a composition-dependent absorption-edge shift

机译：高Sn含量的GeSn合金的MBE生长以及与组成有关的吸收边位移

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Low-temperature MBE growth of up to Ge0.926Sn0.074 alloys on lattice-matched In0.10Ga0.90As resulted in high-quality material as determined by AFM, TEM, and XRD. Samples show longer wavelength absorption-edge shifts with increasing Sn incorporation.

机译：在晶格匹配的In 0.10 Ga 0.90 As上高达Ge 0.926 Sn 0.074 合金的低温MBE生长通过AFM，TEM和XRD确定了高质量的材料。样品显示，随着Sn掺入量的增加，波长吸收边缘的位移会更长。

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《7th IEEE International Conference on Group IV Photonics》|2010年|P.344-346|共3页
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中图分类材料;
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GeSn; germanium; silicon photonics; tin;

机译：锗;锗;硅光子学;锡;

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MBE growth of high Sn-percentage GeSn alloys with a composition-dependent absorption-edge shift

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