A simple method for optocouplers selection in the frame of space applications

摘要

Proton irradiations were performed on three types of optocouplers at three energies 60 MeV, 100 MeV and 200 MeV, followed by a TID irradiation up to 75 kRAD. GEANT4 allowed the calculation of the fluences needed to induce the same NIEL. As a preliminary result, diode''s degradations can be predicted and only depend on the initial minority carrier lifetime τrr0 and not the technology.