Temperature Dependence of Resistivity of MoSi_2-Si Composite Thin Films

摘要

The temperature dependence of resistivity for thin films of a composite of molybdenum disilicide (MoSi_2) and silicon (Si) fabricated by radio frequency magnetron sputtering using a target made of a powder mixture of MoSi_2 and Si with molar ratio of Si to Mo of 1 :X (2.02≤X≤2.55) was analyzed. The temperature dependence could be explained by the multiplicative model consisting of a conduction model similar to the Gruneisen-Bloch model, a modified Anderson localization model for 2.02≤X≤2.21 and the modified Anderson localization model for 2.39≤X≤2.55 over a wide temperature range.