Effect of F-doping on temperature dependence of resistivity of vanadium pentoxide thin films prepared by spray pyrolysis

摘要

This paper reports structural and electrical characteristics of F-doped beta V2O5 thin films of different F concentrations. The films were analyzed by X-ray diffraction. It was found that F-doping in vanadium pentoxide affects the crystallinity of the samples. The SEM images have shown that by increasing the F-doping level, the size of the nanobelt increases. Electrical measurements indicated that the F-doping in beta V2O5 makes the temperature of phase transition change from semiconductor to metallic phase.