Synthesis and Properties of Mn-Doped (Bi_(0.5)Na_(0.5))TiO_3 Thin Films by Chemical Solution Deposition

摘要

Lead-free ferroelectric (Bi_(0.5)Na_(0.5))TiO_3 (BNT) thin films were prepared by chemical solution deposition. BNT and Mn-doped BNT precursor thin films crystallized in the perovskite single phase at 700 °C on Pt/TiO_x/SiO_2/Si substrates. The leakage current density of the perovskite BNT films, especially in the high applied field region, was reduced by doping with a small amount of Mn. Also, Mn doping markedly improved the ferroelectric properties of the films. 0.5 and 1.0 mol% Mn-doped BNT thin films exhibited well-shaped ferroelectric polarization (P)-electric field (E) hysteresis loops at room temperature. Furthermore, the 1 mol% Mn-doped BNT films showed a typical field-induced strain loop, and the effective d_(33) values were estimated to be about 60 pm/V.