首页> 外文会议>IEEE European Test Symposium >NeuroScrub: Mitigating Retention Failures Using Approximate Scrubbing in Neuromorphic Fabric Based on Resistive Memories
【24h】

NeuroScrub: Mitigating Retention Failures Using Approximate Scrubbing in Neuromorphic Fabric Based on Resistive Memories

机译:neuroscrub:基于电阻存储器的神经晶体近似擦洗耐受滞后失效

获取原文

摘要

Neuromorphic computation-in-memory fabric based on emerging non-volatile memories (NVM) is considered an attractive option to accelerate neural networks (NNs) in hardware as they provide high-performance, low-power, and reduced data movement. Although NVMs offer many benefits, they are susceptible to data retention faults, where previously stored data is not retained. This severely impacts the inference accuracy of mapped NNs. Traditionally, memory scrubbing with error-correcting codes (ECC) is employed to mitigate retention faults in conventional CMOS memories. This is not feasible in NVM-based neuromorphic fabric due to high overhead and inability to represent encoding or decoding in analog computing. In this work, we propose an approximate scrubbing technique for NVM-based neuromorphic fabric to mitigate uni-directional retention faults with minimal storage overhead. The training of the NNs adjusted accordingly to meet the requirements of the scrubbing scheme. On different benchmarks, the proposed scrubbing approach can improve the inference accuracy up to 85.51% over the lifetime with virtually zero storage overhead.
机译:基于新出现的非易失性存储器(NVM)的神经形态计算 - 内存织物被认为是一种有吸引力的选择,以便在硬件中加速神经网络(NNS),因为它们提供高性能,低功耗和减少数据移动。虽然NVMS提供了许多好处,但它们易于数据保留故障,其中不保留先前存储的数据。这严重影响了映射NNS的推理准确性。传统上,采用错误校正码(ECC)擦洗的内存来减轻传统CMOS存储器中的保留故障。由于高开销和无法代表模拟计算中的编码或解码,这在基于NVM的神经形状面料中不可行。在这项工作中,我们提出了一种近似的基于NVM的神经形态织物的擦洗技术,以减轻单向保留故障,以最小的存储开销。相应地调整NNS的训练以满足擦洗方案的要求。在不同的基准测试中,所提出的擦洗方法可以通过几乎零存储开销的寿命提高推理精度高达85.51%。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号