This paper presents charge sampling circuit using new high linearity transconductor (Gm) cell that has third order distortion cancellation. The proposed Gm-cell has almost constant transconductance value over ñ200 mV input voltage range. The charge sampling circuit has SNDR around 73 dB with ENOB of 11 bits and it consumes 4.38 mW power. Its input referred noise is 15.29 nV/ÿHz and noise figure is 24.67 dB at 81 MHz. This architecture is used to implement a programmable analog baseband filter for Bluetooth and UMTS. Simulations were carried out using the TSMC 0.18 ÿm CMOS technology with supply voltage of 1.6 V.
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