Inspection of through silicon vias (TSV) and other interconnections in IC packages by computed tomography

摘要

Through silicon vias (TSV) as used in 3D integrated electronic packages were inspected non-destructively by highly resolving nanofocus computed tomography (nanoCT). In particular, in the TSVs plating voids were visualised and quantitatively evaluated by numerical processing of the resulting volumetric data. The nanoCT technology is outlined and further applications such as interposers etc. are considered.