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23 GHz Fully Integrated CMOS Synthesizer

机译:23 GHz全集成CMOS合成器

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摘要

A fully Integrated 23GHz CMOS PLI^based synthesizer is prevented. This-circuit combines push-push oscillator with a latch based divider to achieve low-power dissipation and a small die. The circuit was designed in 130 nm bulk CMOS process from ST Microelectronics. The synthesized range is from 22 GHz up to 24.2 GHz,the power dissipation is 58 mW under 1.0 V power supply. The measured phase noise is better than -95 dBc/Hz at 1 MHz of the carrier with a 575 MHz reference frequency.
机译:防止了完全集成的基于23 GHz CMOS PLI的合成器。该电路将推挽式振荡器与基于锁存器的分频器结合在一起,以实现低功耗和小裸片。该电路是由意法半导体(ST Microelectronics)采用130 nm体CMOS工艺设计的。合成范围为22 GHz至24.2 GHz,在1.0 V电源下的功耗为58 mW。在参考频率为575 MHz的载波的1 MHz处,测得的相位噪声优于-95 dBc / Hz。

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