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An integrated 8-12 GHz fractional-N frequency synthesizer in SiGe BiCMOS for satellite communications

机译:SiGe BiCMOS中集成的8-12 GHz分数N频率合成器,用于卫星通信

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摘要

We present an integrated fractional-N low-noise frequency synthesizer for satellite applications. By using two integrated VCOs and combining digital and analog tuning techniques, a PLL lock range from 8 to 12 GHz is achieved. Due to a small VCO fine tuning gain and optimized charge pump output biasing, the phase noise is low and almost constant over the tuning range. All 16 sub-bands show a tuning range above 900 MHz each, allowing temperature compensation without sub-band switching. This makes the synthesizer robust against variations of the device parameters with process, supply voltage, temperature and aging. The measured phase noise is -87 dBc/Hz and -106 dBc/Hz at 10 kHz and 1 MHz offset, respectively. In integer-N mode, phase noise values down to -98 dBc/Hz at 10 kHz and -111 dBc/Hz at 1 MHz offset, respectively, were measured.
机译:我们提出了一种用于卫星应用的集成分数N低噪声频率合成器。通过使用两个集成的VCO并结合了数字和模拟调谐技术,可以实现8至12 GHz的PLL锁定范围。由于VCO的微调增益小且电荷泵输出偏置优化,因此相位噪声很低,并且在整个调谐范围内几乎恒定。所有16个子带均显示超过900 MHz的调谐范围,从而无需进行子带切换即可进行温度补偿。这使得该合成器能够抵抗器件参数随工艺,电源电压,温度和老化而变化。在10 kHz和1 MHz偏移下,测得的相位噪声分别为-87 dBc / Hz和-106 dBc / Hz。在整数N模式下,分别测量了在10 kHz时低至-98 dBc / Hz和在1 MHz偏移时低至-111 dBc / Hz的相位噪声值。

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