A Low Power SiGe HBT LNA Utilizing Serial Inductance for Wideband Matching

摘要

A UWB LNA (low noise amplifier) based on 0.35μm SlGe BlCMOS technology is presented in this paper. This LNA adopts a resistance feedback topology to optimize the gain and noise figure. The serial inductance at the base is used to matching input impedance and decreasing group delay variation. The simulation results indicate that the gain of LNA reaches 12.5dB with the variation of 1.9dB and the power consuming is 6.3mW in full band from 3.1GHz to 10 6GHz. This SiGe UWB LNA exhibits less than 5ps group delay variation and less than 3.85dB NF over the entire band.