Cancellation of sub-harmonic and second harmonic components to improve the linearity of a low-power consumption LNA using SiGe HBT

摘要

Three simple methods to improve the third-order intercept point (IP3) of a low-noise amplifier (LNA) for personal communication systems (PCS) applications or CDMA cellular handsets are introduced. Both simulations and results from previous works in the literature are compared in order to demonstrate the effectiveness of these methods in improving the performance of the LNA in terms of linearity when low-bias voltage is used. The LNA was designed to operate at 1.9 GHz, using a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) and 2.4 V bias voltage.