Development of Passive Devices in 130 nm RFCMOS Technology and PDK Implementation for RF VCO Designs

摘要

This paper focuses on the design of RF component design such as MOSFETs,varactors,capacitors and inductors in SMC 0.13um RFCMOS technology. Modeling results of these passives devices and associated PDK are implemented in a 0.13um RFCMOS VCO design. The RF building block has been fabricated from 130 nm CMOS technology and achieved a phase noise of -140.8dBc/Hz@1MHz at a current coasumption of 14mA.