The influences of applied electrical fields on the absorption coefficient and subband energy distances of intersubband transitions (ISBTs) in AlN/GaN coupled double quantum wells (CDQWs) have been investigated by solving the Schrodinger and Poisson equations self-consistently. It is found that the absorption coefficient of the ISBT between the ground state and the second excited state (1odd-2odd) can be equal to zero when the electrical fields are applied in AlN/GaN CDQWs,which is related to applied electrical fields induced symmetry recovery of these states. Meanwhile,the energy distances between lodd-2odd and leven-2odd subbands have different relationships from each other with the increase of applid electrical fields due to the different polarization-induced potential drops between the left and the right wells. The results indicate that an electrical-optical modulator operated within the opto-communication wavelength range can be realized in spite of the strong polarization-induced electrical fields in AlN/GaN CDQWs.
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机译:通过自洽求解Schrodinger和Poisson方程,研究了施加电场对AlN / GaN耦合双量子阱(CDQW)中子带间跃迁(ISBT)的吸收系数和子带能量距离的影响。发现在AlN / GaN CDQWs中施加电场时,基态和第二激发态(1odd-2odd)之间的ISBT吸收系数可以等于零,这与施加的电场感应对称性有关。这些状态的恢复。同时,由于左右阱之间极化引起的电位降的不同,在奇数子带和奇数子带之间的能量距离随着施加电场的增加而具有彼此不同的关系。结果表明,尽管在AlN / GaN CDQW中偏振诱导电场很强,但仍可以实现在光通信波长范围内工作的电光调制器。
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