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Comparison of Porous Ceramic Materials with Low Thermal Expansion Coefficient Prepared with SiC and Black-Al_2O_3

机译:SiC和Black-Al_2O_3制备低热膨胀系数多孔陶瓷材料的比较

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Porous ceramic materials with low thermal expansion (LTE) at room temperature were prepared by heating a mixture of SiC or black-Al_2O_3, vitrified bonding material (VBM) and LiAlSiO_4 at temperatures from 850°C to 1100°C. The mixture was prepared in adequate proportions to obtain a material with LTE according to previous works made in our laboratory. It was observed that a change in temperature provoked the formation of a new phase, LiAlSi_3O_8, which appears above 900°C. The presence of this new phase did not affect the thermal expansion value, keeping LTE at room temperature. All compounds showed around 40% of porosity, and Young's modulus values of 30 GPa using black-Al_2O_3 or SiC. X-ray diffraction analysis (XRD) revealed that above 900°C the phase LiAlSi_3O_8 starts to appear as a consequence of the melting of VBM, which is reacting with the raw materials. SEM micrographs showed the presence of SiC or black-Al_2O_3 grains joined by VBM, which is acting as a bridge between them.
机译:通过在850°C至1100°C的温度下加热SiC或黑色Al_2O_3,玻璃化结合材料(VBM)和LiAlSiO_4的混合物来制备室温下具有低热膨胀(LTE)的多孔陶瓷材料。根据我们实验室先前的工作,以适当的比例制备混合物,以获得具有LTE的材料。观察到温度变化引起了新相LiAlSi_3O_8的形成,该相出现在900℃以上。这个新阶段的存在并没有影响热膨胀值,从而使LTE保持在室温下。使用黑色Al_2O_3或SiC时,所有化合物的孔隙率均约为40%,杨氏模量值为30 GPa。 X射线衍射分析(XRD)显示,在900°C以上,由于VBM熔化而与原料反应,LiAlSi_3O_8相开始出现。扫描电镜显微照片显示存在通过VBM连接的SiC或黑色Al_2O_3晶粒,这是它们之间的桥梁。

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