Thermal characterization of single-die and multi-die high power light-emitting diodes

摘要

The forward voltage U_f for single-die high-power light-emitting diodes (LEDs) driven at currents within a specificcurrent interval is proportional to the diode junction temperature T . This correlation can be used to determine junction temperatures in lots of practical applications. However, multi-die high-power LED modules with multiple series or parallel connections of diode chips are believed to have a much greater potential to be used in general lighting than single-die packages. The current-voltage characteristics of a variety of multi-die LEDs, ranging from two to a few hundred dies, are recorded at different ambient temperatures. The results are used to model the forward voltage as a function of a generalized junction temperature. In multi-die LED modules these models allow analogous junction temperature determination as in single-die packages. The influence of drive current and drive mode (DC or PWM) on junction temperature is examined and compared for both single-die and multi-die packages. Apparently, junction temperature only significantly increases when a certain current level is exceeded, depending on the internal series resistance of the complete LED package. Moreover, combining U_f (7) models for single-die and multi-die LEDs allowsfor the characterization of thermal interactions between different dies of multi-die packages, whether they are switched on or not. The junction temperature of separate LED dies in multi-die modules can then be predicted and used for further diode characterization.