Drain Current Improvements in Uniaxially Strained p-MOSFETs: A Multi-Subband Monte Carlo Study

摘要

This paper presents the first Multi-Subband Monte Carlo study of uniaxially strained p-MOSFETs and analyzes the ingredients through which the strain improves both the long channel mobility and the I_(ON) of nanoscale transistors. In particular, our results show that the compressive stress in [110]/(001) p-MOS transistors increases the I_(ON) by improving both the injection velocity and the back-scattering coefficient.