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The Research Progress of Metrological 248nm Deep Ultraviolent Microscope Inspection Device

机译:计量248NM深紫外显微镜检测装置的研究进展

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In lithography process, the precision of wafer pattern to a large extent depends on the geometric dimensioning and tolerance of photomasks when accuracy of lithography aligner is certain. Since the minimum linewidth (Critical Dimension) of the aligner exposing shrinks to a few tens of nanometers in size, one-tenth of tolerance errors in fabrication may lead to microchip function failure, so it is very important to calibrate these errors of photomasks. Among different error measurement instruments, deep ultraviolent (DUV) microscope because of its high resolution, as well as its advantages compared to scanning probe microscope restrained by measuring range and scanning electron microscope restrained by vacuum environment, makes itself the most suitable apparatus. But currently there is very few DUV microscope adopting 248nm optical system, means it can attain 80nm resolution; furthermore, there is almost no DUV microscope possessing traceable calibration capability. For these reason, the National Institute of Metrology, China is developing a metrological 248nm DUV microscope mainly consists of DUV microscopic components, PZT and air supporting stages as well as interferometer calibration framework. In DUV microscopic component, the Kohler high aperture transmit condenser, DUV splitting optical elements and PMT pinhole scanning elements are built. In PZT and air supporting stages, a novel PZT actuating flexural hinge stage nested separate X, Y direction kinematics and a friction wheel driving long range air supporting stage are researched. In interferometer framework, a heterodyne multi-pass interferometer measures XY axis translation and Z axis rotation through Zerodur mirror mounted on stage. It is expected the apparatus has the capability to calibrate one dimensional linewidths and two dimensional pitches ranging from 200nm to 50μm with expanded uncertainty below 20nm.
机译:在光刻过程中,晶片图案的精度在很大程度上取决于当光刻对准器的精度确定时的几何尺寸和光掩模的公差。由于对准器的最小线宽(临界尺寸)暴露于几十纳米的尺寸,因此制造中的十分级公差误差可能导致微芯片功能故障,因此校准这些光掩模误差非常重要。在不同的误差测量仪器中,深度紫外线(DUV)显微镜由于其高分辨率,以及与通过测量范围和扫描电子显微镜受真空环境抑制的扫描探针显微镜相比的优点,使其本身成为最合适的装置。但目前,采用248nm的Duv显微镜很少,意味着它可以达到80nm的分辨率;此外,几乎没有DUV显微镜具有可追溯的校准能力。由于这些原因,中国的国家计量研究所正在开发248nm Duv显微镜,主要由DuV微观组件,PZT和空气支撑阶段以及干涉仪校准框架组成。在DUV微观部件中,构建了Kohler高孔径发射冷凝器,DuV分离光学元件和PMT针孔扫描元件。在PZT和空气支撑级中,研究了一种新的PZT致动弯曲阶段,嵌套单独的X,Y方向运动学和摩擦轮驱动长距离空气支撑阶段。在干涉仪框架中,外差多通道干涉仪通过安装在舞台上的Zerodur镜子来测量XY轴平移和Z轴旋转。预计该装置具有校准一维线宽的能力,两维间距范围从200nm到50μm的延伸,在20nm以下的扩展不确定性。

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