Numerical simulation study of crystal growth of SixGe1-x by using floating zone technique and traveling heater method

摘要

A numerical simulation study was carried out to investigate the effect of convection occurring in the floating-zone (FZ) technique and traveling heater method (THM) for growth of an alloy of Silicon and Germanium (SixGe1-x). The simulation results on the FZ showed that the three-dimensionality of the solutal Marangoni convection was responsible for the unstable growth observed in the experiment of Ref [1]. It was also found that the application of an unsteady crucible rotation in the THM promoted better mixing in the solution, and led a uniform concentration distribution in the solution. This is beneficial for growing crystals with uniform and higher compositions by using THM.