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Edge-defined contact heater apparatus and method for floating zone crystal growth

机译:边缘限定的接触加热器装置和用于浮区晶体生长的方法

摘要

An apparatus for growing a monocrystalline body (30) from a polycrystalline feed rod (22) includes a heater (20) that is positioned to heat a short section of the polycrystalline rod (22) to create a molten zone (34). The heater (20) is formed to include a shaper (40) that contacts the polycrystalline rod (22) in the molten zone (34) and has a hole (46) to allow flow in the molten zone (34) between the polycrystalline rod (22) side and the monocrystalline body (30) side of the shaper. The shaper (40) has an edge (42) that defines the boundary of the cross-section of the monocrystalline body (30) that is formed as the molten material solidifies.
机译:用于从多晶进料棒(22)生长单晶体(30)的设备包括加热器(20),该加热器(20)定位成加热多晶棒(22)的一小段以形成熔融区(34)。加热器(20)形成为包括成形器(40),该成形器(40)在熔融区(34)中与多晶棒(22)接触并且具有孔(46)以允许在多晶棒之间的熔融区(34)中流动。成形器的(22)侧和单晶体(30)侧。成形器(40)具有边缘(42),该边缘(42)限定了随着熔融材料固化而形成的单晶体(30)的横截面的边界。

著录项

  • 公开/公告号US5114528A

    专利类型

  • 公开/公告日1992-05-19

    原文格式PDF

  • 申请/专利权人 WISCONSIN ALUMNI RESEARCH FOUNDATION;

    申请/专利号US19900563706

  • 发明设计人 SINDO KOU;

    申请日1990-08-07

  • 分类号B01J17/10;

  • 国家 US

  • 入库时间 2022-08-22 05:22:53

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