Photoconductivity action and structural properties of amorphous carbon nitride thin films

摘要

We report the photoconductivity action of amorphous carbon nitride (a-C:Nx) thin films along withstructural characterizations. In this research work, a-C:Nx thin films were deposited by microwave (MW) surface waveplasma (SWP) CVD at room temperature. During deposition ethylene (C_2H_4 = 20, 30 sccm) and nitrogen (N = 5 sccm)were used as plasma source at maintained MW power 550 W. As deposited a-C:Nx thin films were characterized byXPS, FTIR and Raman spectroscopy for structural characterizations and photoconductivity were measured by solarsimulator under one sun condition.