Due to their robustness against various experimental artefacts and the high sensitivity atlow minority carrier concentrations quasi-steady-state photoluminescence lifetime measurements are wellsuited to provide the experimental data required for advanced defect spectroscopy methods such astemperature and injection level dependent lifetime spectroscopy. Photon reabsorption within the siliconwafer is a potential source of experimental artefacts in such measurements. Temperature variationschange the fraction of spontaneously emitted photons that are reabsorbed on the way to the surface, whichaffects the calibration of the measured photoluminescence signal into absolute quantities such as theminority carrier lifetime. Here we want to quantify, to what extent and in which temperature range photonreabsorption in silicon wafers is expected to be significant and how these effects can be accounted for inthe analysis of temperature dependent photoluminescence lifetime measurements.
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