Subsurface structure defects beneath fracture area of reaction-bonded silicon carbide in ultra-precision grinding

摘要

In this paper, cross-section transmission electron microscopy (TEM) was first time explored to investigate the structure defects beneath the fractured area of reaction-bonded silicon carbide (RB-SiC) induced by ultra-precision grinding. The results showed that there was no slip system glide occurred in SiC particle, just basal plane dislocation was activated and dissociated into Shockley partial dislocations. It is proposed that the blocking effect on sliding motion caused by cross propagated dislocations, phase boundary, and sintering agents play an important role in the evolution of brittle fracture.