Molecular dynamics simulation investigation of hot nanometric cutting of single crystal silicon

摘要

In this study, molecular dynamics (MD) simulation is employed to investigate mechanisms occurring during nanometric cutting process of single crystal silicon on different crystallographic planes under a wide range of workpiece temperatures (300-1500 K) by comparing the results obtained from two types of interatomic potential functions i.e. an analytical bond order potential (ABOP) and a modified version of Tersoff potential. It was found that resultant force decreases up to 25% at workpiece temperature of 1173 K. A steep decrease of tool temperature at 1500 K was noticed on the (010) and (110) crystal planes when the modified Tersoff potential function was used, attributable to the decrease of the tool-chip contact length at 1500 K. Another point of interest was the decrease of magnitude of von Mises stresses on the cutting edge with the increase of the workpiece temperature for the different crystallographic planes.