Model of Dielectric Charging and Predict the Effects on the Reliability of RF MEMS Capacitive switches

摘要

Dielectric charging is the main cause for switch failure. The paper focuses on the way to reduce dielectric charging, in order to improve reliability of the switch. A more comprehensive analytical model present which firstly concerned several important factors in one model, such as the characteristic of RF signal, applied DC bias voltage and working temperature. The model enables us to calculate and understand the effects of dielectric charging on the behaviour of RF MEMS capacitive switches. Each factors which effects on the reliability is simulated.