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INFLUENCE OF WORST CASE CROSSTALK DUE TO MULTIPLE AGGRESSORS ON SINGLE VICTIM IN DSM CHIPS

机译:DSM芯片中多种配剂引起的最坏情况交叉对单只受害者的影响

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In this paper the influence of crosstalk on single victim due to multiple aggressors in the same metal layer is studied. We develop here a crosstalk fault model based on the consideration of usual distributed coupling capacitance and RLGC parasitics of interconnects in addition to mutual conductance (resistive bridging) in order to deal the crosstalk influence. Here, we estimate the crosstalk influence for worst case input signal combinations on aggressors, which induce more crosstalk on single victim. Our model helps the System-on-Chip (SoC) designers by providing sufficient insights into Signal Integrity problems. Experimental simulations with our crosstalk model, carried out using Philips CMOS 12 (130nm) technology parameters, further validated with PSPICE simulations reveal that coupling capacitance's effect is more on crosstalk glitch and signal delay on victim's output whereas, the mutual conductance affects more on the final steady state value of the victim's output signal.
机译:本文研究了串扰对同一金属层中多个侵害者造成的单个受害者的影响。为了解决串扰的影响,我们在此基础上开发了一种串扰故障模型,该模型基于通常的分布耦合电容和互连的RLGC寄生关系以及互导(电阻桥接)的考虑。在这里,我们估计了最坏情况下的输入信号组合对串扰的串扰影响,这会在单个受害者身上引发更多的串扰。我们的模型通过提供对信号完整性问题的足够见解,可以帮助片上系统(SoC)设计人员。使用飞利浦CMOS 12(130nm)技术参数进行的串扰模型实验仿真,并通过PSPICE仿真进一步验证,结果表明,耦合电容对串扰干扰的影响更大,而对受害者输出的信号延迟影响更大,而互导对最终输出的影响更大受害者输出信号的稳态值。

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