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Annealing Effects on the Structural Properties of Gold Films on Si by the RF Magnetron Sputtering

机译:射频磁控溅射对硅上金膜结构性能的退火效应

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We have investigated the effect of annealing temperature on the structural property of Au thin films deposited on Si(100) substrate using the radio frequency (RF) magnetron sputtering technique. X-ray diffraction revealed that the relative intensities and FWHM of (111), (200), and (311) peaks increased and decreased, respectively, after thermal annealing at 600°C. Scanning electron microscopy indicated that after annealing at 600-700°C, Au structures agglomerated on Si(100) surfaces. Energy dispersive x-ray spectrometry (EDX) revealed that the agglomerated structure was composed of pure Au.
机译:我们已经研究了退火温度对使用射频(RF)磁控溅射技术沉积在Si(100)衬底上的Au薄膜的结构性能的影响。 X射线衍射表明,在600℃下进行热退火后,(111),(200)和(311)峰的相对强度和FWHM分别增加和降低。扫描电子显微镜表明,在600-700°C退火后,Au结构团聚在Si(100)表面上。能量色散X射线光谱法(EDX)表明,团聚结构由纯金组成。

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