Growth of Hg_(1-x)(Cd_(1-y)Zn_y)_x Te on Si(111) by isothermal vapor phase epitaxy

摘要

The quaternary HgCdZnTe (MCZT) epilayer was successfully grown on lattice matched Cd_(0.96)Zn_(0.04)Te/Si(111) substrates using isothermal vapor phase epitaxy (ISOVPE) method. It was found that Si wafer is an excellent barrier against Hg and Cd diffusion. Cross-sectional images reveal a flat and well-distinguished interface between MCZT and Si, and voids formed due to interdiffusion was not observed in MCZT layer above the Si wafer. It was demonstrated that it was possible to yield an almost homogeneous MCZT epilayer without compositional gradient by selecting suitable growth time.