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Structure Characterizations and Growth of Bulk Znse Single Crystals by Zn(Nh_4)_3cl_5 Transport

机译:Zn(Nh_4)_3cl_5迁移形成大块Znse单晶的结构表征和生长

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Two chemical vapor transport methods with Zn(NH_4)_3Cl_5 transport agent were developed to grow ZnSe bulk single crystals. Two kinds of Zn-rich ZnSe single crystals, conical crystal and flake crystal, were grown directly from untreated ZnSe polycrystals and two elements, respectively. The structure characters, purity and etch pit density were studied by rotating orientation XRD, PL spectrum and optical microscope. The contrastive investigation between two growth results indicated that the conical crystal was composed of (111) and (100) faces, and the flake crystal exhibited only (111) face. Moreover, the vicinal interface leaning to (111) face by the angle of 3.1° was the dominative growth face in vapor growth system, and growth occurs by layer-by-layer model. FWHM of RO-XRD pattern of ZnSe (111) face was 24sec for conical ZnSe crystal and 48s for ZnSe flake crystal. The results suggested that high-quality ZnSe crystals can be grown from the chemical vapor transport method with Zn(NH_4)_3Cl_5 transport agent.
机译:开发了两种使用Zn(NH_4)_3Cl_5传输剂的化学气相传输方法来生长ZnSe块状单晶。分别从未经处理的ZnSe多晶和两种元素分别直接生长出两种富含Zn的ZnSe单晶,即锥形晶体和片状晶体。通过旋转取向XRD,PL光谱和光学显微镜研究了结构特征,纯度和刻蚀坑密度。两种生长结果之间的对比研究表明,锥形晶体由(111)和(100)面组成,而片状晶体仅显示(111)面。另外,在气相生长系统中,朝向(111)面倾斜3.1°角的邻界面是主要的生长面,并且通过逐层模型进行生长。圆锥形ZnSe晶体的ZnSe(111)面的RO-XRD图案的FWHM为24sec,而ZnSe片状晶体的FWHM为48s。结果表明,采用Zn(NH_4)_3Cl_5传输剂可以通过化学气相传输方法生长出高质量的ZnSe晶体。

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