Growth and characterizations of bulk ZnSe single crystal by chemical vapor transport

摘要

The bulk ZnSe single crystal was grown from the vapor by Zn(NH_4)_3Cl_5 transport from ZnSe polycrystals source, which was synthesized from commercial grade high-purity elements, selenium and zinc. The growth temperature between the source and the growing ZnSe single crystal was 898-915℃ and the temperature difference of the growth tube was 14-18℃. The orange ZnSe single crystal of φ9 x 25mm was obtained. The studies on the features and habit of the growth surface show that the growth surface of as-grown ZnSe crystal was composed of {11 l}and {100} faces. The crystal quality of ZnSe crystal was investigated by RO-XRD. The FWHM value of RO-XRD patterns of ZnSe (111) face is 24s. The photoluminescence spectrum is dominated by two broad peaks located at 439 and 418 nm, respectively. The etch pit density is about (5-7) x 10~4cm~(-2). The absorption edge is very sharp and is located at about 465 nm. All of the above results indicate that a ZnSe single crystal with high crystalline quality and high purity can be grown from the vapor by Zn(NH_4)_3Cl_5 transport.