A 5.25 GHz SiGe bipolar power amplifier for IEEE 802.11a wireless LAN

摘要

An integrated wireless LAN radio frequency power amplifier (PA) for 5.25 GHz has been realized in a 40 GHz-f_T, 0.35 μm-SiGe-bipolar technology. The single-ended 3-stage power amplifier uses on-chip inductors and a short on-chip stripline for the interstage matching. At 3.3 V supply voltage the OP1dB is 23.8 dBm, and a saturated output power of 25.9 dBm is achieved at 5.25 GHz. The PAE at the OP1dB is 24%. The small-signal gain is 27 dB.