SiGe HBTs for millimeter-wave applications with simultaneously optimized f_T and f_max of 300 GHz

摘要

Millimeter-wave applications are gaining growing interest in recent times. To meet the challenges for such applications, SiGe HBTs, with simultaneously optimized f_T and f_max of >300 GHz, are developed. To the author's knowledge, this is the first report of f_T and f_max both exceeding 300 GHz for any Si-based transistor. BV_CEO and BV_CBO are 1.6 V and 5.5 V, respectively, with peak current gain of 660. Noise measurement shows F_min of 0.45 dB and 1.4 dB at 10 GHz and 25 GHz with associate gain of 14 dB and 8 dB, respectively. The results indicate SiGe HBTs are highly suitable for the rapidly expanding millimeter-wave applications.