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PHOTOLUMINESCENCE IN OXIDISED BLACK SILICON SURFACEAS APPLIED TO LARGE AREA SOLAR CELLS

机译:氧化硅黑硅表面中的光致发光应用于大面积太阳能电池

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A low-cost, large area, random, maskless texturing scheme independent of crystal orientation isexpected to significantly improve the terrestrial photovoltaic technology. We investigated silicon surfacemicrostructures formed by reactive ion etching (RIE) using a multi-hollow cathode system. Desirable texturingeffect has been achieved when radio-frequency rf power of about 20 Watt per one hollow cathode glow was appliedin our rf multi-hollow cathode system. The black silicon etched surface shows almost zero reflectance in the visibleregion as well as in near IR region. Photoluminescence study on the surface has been done and the results arereported in this paper. The etched silicon surface is covered by columnar microstructures with diameters from 50 to100 nm and depth of about 500 nm. We have successfully fabricated mono-crystalline silicon solar cells having anefficiency of 11.7% and multi-crystalline silicon solar cells with efficiency of 10.2%.
机译:与晶体取向无关的低成本,大面积,随机,无掩模的纹理化方案是 有望显着改善地面光伏技术。我们调查了硅表面 通过使用多空心阴极系统的反应离子刻蚀(RIE)形成的微结构。理想的纹理化 通过施加每20个空心阴极辉光约20瓦的射频rf功率,可以达到上述效果 在我们的RF多空心阴极系统中。黑色硅蚀刻的表面在可见光中显示几乎为零的反射率 区域以及近红外区域。已经完成了对表面的光致发光研究,其结果是 本文报道。蚀刻的硅表面被直径为50到50毫米的圆柱状微结构覆盖。 100 nm和约500 nm的深度。我们已经成功地制造出具有单晶硅太阳能电池的单晶硅太阳能电池。 效率为11.7%,多晶硅太阳能电池的效率为10.2%。

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