A 10 Gbit/s Si CMOS transimpedance amplifier with an integrated MSM photodetector for optical interconnections

机译：具有用于光互连的集成MSM光电检测器的10 Gbit / s Si CMOS跨阻放大器

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摘要

A wideband preamplifier is designed and fabricated using a 0.18 /spl mu/m CMOS technology. The amplifier is heterogeneously integrated with a thin film InGaAs inverted MSM photodetector, and a successful demonstration at a bit rate of 10 Gbps is reported.

机译：宽带前置放大器是使用0.18 / spl mu / m CMOS技术设计和制造的。该放大器与薄膜InGaAs倒置MSM光电检测器异质集成，据报道成功演示了10 Gbps比特率。

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《Lasers and Electro-Optics Society, 2004. LEOS 2004》|2004年|p.517-518|共2页
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Indal Song; Sang-Woo Seo; Seokhun Hyun; Daeik Kim; Sa Huang; Brooke M.; Jokerst N.M.; Brown A.;
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中图分类无线电电子学、电信技术;
关键词
CMOS integrated circuits; integrated optoelectronics; photodetectors; optical interconnections; preamplifiers; wideband amplifiers; metal-semiconductor-metal structures; indium compounds; gallium arsenide; III-V semiconductors; semiconductor thin films; Si CMOS amplifier; transimpedance amplifier; integrated photodetector; MSM photodetector; optical interconnections; wideband preamplifier; CMOS technology; thin film photodetector; inverted MSM photodetector; 0.18 mum; 10 Gbit/s; Si; InGaAs;

机译：CMOS集成电路;集成光电;光电探测器;光学互连;前置放大器;宽带放大器;金属-半导体-金属结构;铟化合物;砷化镓; III-V半导体;半导体薄膜; Si CMOS放大器;跨阻放大器;集成光电探测器; MSM光电探测器;光学互连;宽带前置放大器; CMOS技术;薄膜光电探测器;倒置MSM光电探测器;0.18μm; 10 Gbit / s; Si; InGaAs;

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专利

1. 12 Gbit/s CMOS DNFFCG差分跨阻放大器的设计 [J] . 范忱, 王蓉, 王志功东南大学学报（英文版） . 2018,第001期
2. Monolithically integrated 10 Gbit/s photodiode and transimpedance amplifier in thin-film SOI CMOS technology [J] . A. Afzalian, D. Flandre Electronics Letters . 2006,第24期

机译：薄膜SOI CMOS技术中的单片集成10 Gbit / s光电二极管和跨阻放大器
3. A broadband, differential transimpedance amplifier in 0.35 μm SiGe BICMOS technology for 10 Gbit/s fiber optical front-ends [J] . Yunus Akbey, Osman Palatmutcuogullari Analog Integrated Circuits and Signal Processing . 2013,第1期

机译：采用0.35μmSiGe BICMOS技术的宽带差分互阻放大器，用于10 Gbit / s光纤前端
4. 2.5 Gbit/s CMOS transimpedance amplifier for optical communication applications [J] . Sung Min Park, Hoi-Jun Yoo Electronics Letters . 2003,第2期

机译：用于光通信应用的2.5 Gbit / s CMOS跨阻放大器
5. A 10 Gbit/s Si CMOS Transimpedance Amplifier with an Integrated MSM Photodetector for Optical Interconnections [C] . Indal Song, Sang-Woo Seo, Seokfaun Hyun, Annual Meeting of the IEEE Lasers and Electro-Optics Society . 2004

机译：具有用于光学互连的集成MSM光电探测器的10 Gbit / s Si CMOS跨阻抗放大器
6. Multi-Gbit/s transimpedance amplifier with integrated photodetector for optical interconnects. [D] . Song, Indal. 2004

机译：具有用于光互连的集成光电检测器的Multi-Gbit / s跨阻放大器。
7. Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge [O] . K. J. A. Ooi, D. K. T. Ng, T. Wang, -1

机译：将USRN：Si7N3的CMOS光学参量放大器的极限推高到双光子吸收边缘之上
8. Design of CMOS broadband transimpedance amplifiers for 10Gbit/s optical communications [O] . Zheng Hao Lu -1

机译：10Gbit / s光通信CMOS宽带跨阻抗放大器的设计

A 10 Gbit/s Si CMOS transimpedance amplifier with an integrated MSM photodetector for optical interconnections

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