首页> 外国专利> Optical coupling structure for coupling an integrated silicon germanium photodetector/transimpedance amplifier and an integrated optics circuit

Optical coupling structure for coupling an integrated silicon germanium photodetector/transimpedance amplifier and an integrated optics circuit

机译:用于耦合集成硅锗光电探测器/跨阻放大器和集成光学电路的光学耦合结构

摘要

An optical device may include an optical coupling structure to couple a silicon-germanium photodetector to an integrated optics circuit. The optical coupling structure may comprise a silicon waveguide. The silicon waveguide may be tapered such that a thickness of the silicon waveguide at a first end of the optical coupling structure is smaller than a thickness of the silicon waveguide at a second end of the optical coupling structure, and may be tapered such that a width of the silicon waveguide at the first end is smaller than a width of the silicon waveguide at the second end. The optical coupling structure may include a silicon-nitride waveguide that covers the silicon waveguide, and is tapered such that a width of the silicon-nitride waveguide at the first end is smaller than a width of the silicon-nitride waveguide at the second end. The optical coupling structure may include a silica waveguide.
机译:光学器件可以包括光学耦合结构,以将硅锗光电探测器耦合至集成光学电路。光学耦合结构可以包括硅波导。硅波导可以是锥形的,使得在光耦合结构的第一端的硅波导的厚度小于硅波导的在光学耦合结构的第二端的厚度,并且可以是锥形的,以使得宽度硅波导在第一端的宽度小于硅波导在第二端的宽度。所述光耦合结构可以包括覆盖所述硅波导的氮化硅波导,并且逐渐变细以使得所述氮化硅波导在第一端的宽度小于所述氮化硅波导在第二端的宽度。光学耦合结构可以包括二氧化硅波导。

著录项

  • 公开/公告号US10663669B2

    专利类型

  • 公开/公告日2020-05-26

    原文格式PDF

  • 申请/专利权人 LUMENTUM OPERATIONS LLC;

    申请/专利号US201816126841

  • 发明设计人 LANCE THOMPSON;SHIBNATH PATHAK;

    申请日2018-09-10

  • 分类号G02B6/42;G02B6/30;G02B6/122;

  • 国家 US

  • 入库时间 2022-08-21 11:29:46

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