Schottky photodiode arrays on the basis of n-Pb_(1-x)Sn_xTe_(1-y)Se_y epitaxial layers, lattice matched with {100}KCl substrates

摘要

The linear photovoltaic infrared sensor arrays have been formed on the basis of high-quality epitaxial layers of Pb_(1-x)Sn_xTe_(1-y)Se_y quaternary solid solutions, lattice matched with {100}KCl substrates, by the thermal vacuum deposition technique. Epilayers were grown from bounded volume of (Pb_(1-v)Sn_v)_(1-w)(Te_(1-u)Se_u)_w melt-solutions by the liquid phase epitaxy technique at the liquidus temperature of (773)/(873) K. The obtained 2x5-element matrix of the infrared photodiodes with the Au/δ-layer-Pb_(0.83)Sn_(0.17)Te_(0.79)Se_(0.21) Schottky barrier at the 170 K, peak wavelength λ_p ～8.2 μm and cutoff wavelength λ_c～8.8 μm had the zero bias resistance area product R_0A=(0.09)/(0.22) Ω·cm~2, peak quantum efficiency η_λ=(0.34)/(0.45) and peak detectivity D_λ~*=((0.6)/(1.3))x10~(10) cm·Hz~(1/2)-W~(-1).