A Study of Copper Planarization Using Ultra High Selective Copper Slurry on Sub-100nm Device

摘要

In this study, the dependence of Cu planarization process for 90nm applications on the local metal density over a wide range has been evaluated using an Ultra high SElective Cu Slurry (USECuS). This CMP process can improve the erosion and dishing on Cu interconnects. Using the USECuS CMP process, the sheet resistance of metal line was improved by 20% for median and 60% for range compared with that of the conventional CMP processes.