Mask Inspection Challenges for 90nm and 130nm Device Technology Nodes: Inspection Sensitivity and Printability Study using SEMI Standard Programmed Defect Masks

摘要

As our chip producing industry rapidly ramps to mass production of the 130nm device technology node and wrapping up the final stages of 90nm node process technology development, the ability to inspect all types of 130nm node masks and early identification of shortcomings in 90nm node mask inspection are extremely important. In this paper, we share our experience of mask inspection for the 90nm and 130nm nodes, using the advanced TeraStar mask inspection system (KLA-Tencor) with the SEMI programmed defect standard masks, comprising three substrate types (binary, 248nm-KrF MoSi and 193nm-ArF MoSiON). Both Die-to-Die (D2D) and Die-to-Database (DDB) inspections were carried out and the results are presented with our assessments of benefits and shortcomings of those methods. To verify the resulting defects actually impact device functionality, we also carried out systematic printability experiments with our proprietary 130nm and 90nm nodes lithography processes. The wafer results were then compared with mask inspection results and mask measurement data to draw our final conclusions. In addition, we will also present inspection performance of the TeraStar system on our 130nm production masks and very challenging 90nm node (ArF EAPSM/AAPSM) development masks.