Improvement of NLD mask dry etching system for 100nm node technology

摘要

The advanced photomask dry etching system using neutral loop discharge (NLD) has been thought as a promising candidate for the next generation technology, because the NLD plasma has a capability to control the plasma distribution and density. In the previous work, we improved CD uniformity for 130nm node technology using the neutral loop modulation etching technique. However, 100nm node lithography requires tighter specification, thus we set a target to achieve CD accuracy of 6nm (3 sigma) by improving CD uniformity and loading effect of the NLD dry etching system. First, we changed the system configuration: exhaust place, reactor size, and electrode shape. Especially, by optimizing the antenna configuration, we improved the unevenly distributed plasma. Additionally, we introduced a new etching technique to reduce CD shift from resist profiles by enhancing Cr/Resist selectivity. Consequently, the NLD dry etching system for 100nm node technology was confirmed the effectiveness to improve CD performance using the above techniques.