Repair and imaging of 193 nm MoSiON phase shift photomasks

摘要

In this paper, we will be discussing the repair of 193 nm Molybdenum Suicide (MoSiON) phase-shift masks by Focused Ion Beam (FIB) technology. Development of a next generation FIB column has allowed greater resolution of photomask patterns enabling efficient repair of 193 nm MoSiON phase-shift mask defects in patterns as small as 480 nm on the mask. The capabilities of this next generation VisION~(TM) ion beam column achieve enhanced imaging at lower ion beam currents, minimizing damage to the substrate material while improving repair profiles. Both clear defects and opaque defects were investigated.