Imaging Quality Analysis Using Direct Monte Carlo Simulation and CAR Reaction Model in Mask Fabrication

摘要

We have developed a novel EB lithography simulator, which can analyze imaging quality such as Line Edge Roughness (LER), pattern distortion, and corner rounding for the mask fabrication process. The simulator has a direct MonteCalro calculation mode with unequal mesh dividing, works on cluster PCs hardware, and installs an exact Chemically Amplification Resist (CAR) reaction model. The simulation analysis line and contact hole patterns clarify that intrinsic LER induced by electron scattering is dependent on the exposure dose below 10uC/cm2 and has strong dependence on diffusion length. Moreover, the simulation identify that there is an optimum point around 10uC/cm2 of sensitivity and 30nm of diffusion length, considering corner rounding effect. The developed simulator demonstrates that direct MonteCalro simulation can analyze the imaging quality of mask pattern quantitatively and practically, and has the potential to be a mainstream for EB lithography simulation.