ArF (193nm) alternating aperture PSM quartz defect repair and printability for 100nm node

机译：ArF（193nm）交替孔径PSM石英缺陷修复和100nm节点可印刷性

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Repair and printability of 193nm Alternating Aperture Phase Shift Masks (AAPSM) have been studied in detail in an effort to understand the overall production capability of these masks for wafer production at the lOOnm node and below.

机译：已经详细研究了193nm交替孔径相移掩模（AAPSM）的可修复性和可印刷性，以便了解这些掩模在100nm节点以下的晶圆生产的总体生产能力。

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《Annual BACUS symposium on photomask technology;BACUS symposium on photomask technology》|2002年|p.786-797|共12页
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Jerry X. Chen; John Riddick; Matthew Lamantia; Azeddine Zerrade; Robert K. Henderson; Greg Hughes; Cyrus Tabery; Khoi Phan; Christopher Spence; Amy Winder; Bill Stanton; Eugene Delarosa; John G.Maltabes; Cce Philbin; Lloyd C.Litt; Anthony Vacca; Scott Pom;
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中图分类无线电电子学、电信技术;
关键词
193nm alternating PSM; repair; printability; 193nm lithography;

机译：193nm交替PSM;修理;适印性193nm光刻;

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专利

1. Recent Progress in ArF Lithography for the 100nm Node [J] . A.M.Goethals, G.Vandenberghe, I.Pollentier, Journal of Photopolymer Science and Technology . 2001,第3期

机译：100nm节点的ArF光刻技术的最新进展
2. Alternating-PSM repair by nanomachining [J] . Yasutaka Morikawa, Haruo Kokubo, Naoya Hayashi, Microlithography world . 2003,第4期

机译：通过纳米加工交替进行PSM修复
3. Alternating-PSM repair by nanomachining [J] . Yasutaka Morikawa, Haruo Kokubo, Naoya Hayashi, Microlithography world . 2003,第4期

机译：通过纳米加工交替进行PSM修复
4. ArF (193nm) alternating aperture PSM quartz defect repair and printability for 100nm node [C] . Sc, Anthony Vacca, Lloyd C.Litt, Annual BACUS symposium on photomask technology . 2002

机译：ARF（193nm）交替的Aberture PSM石英缺损修复和100nm节点的可打印性
5. Printability study of pattern defects in the EUV mask as a function of hp nodes [O] . Tae-Geun Kim, Hwan-Seok Seo, In-Yong Kang, 2012

机译：EUV掩模模式缺陷作为HP节点的函数的可印刷性研究

ArF (193nm) alternating aperture PSM quartz defect repair and printability for 100nm node

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