The design and testing of integrated magnetic sensors based on the Hall principle are described. The sensors have been fabricated using a standard 0.8 μm CMOS process. Sensitivity improvements and offset reduction have been achieved by a proper design of the active layers and sensor geometry. The resulting devices, included in four different 1.5mm x 1.5mm chips, have been tested in a spatially uniform magnetic field in order to compare the sensitivity, offset and linearity of the various structures.
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机译：描述了基于霍尔原理的集成磁传感器的设计和测试。传感器是使用标准的0.8μmCMOS工艺制造的。通过对有源层和传感器几何结构进行适当设计，可以提高灵敏度并减少偏移。为了比较各种结构的灵敏度，偏移和线性，已在空间均匀的磁场中对包含在四个不同的1.5mm x 1.5mm芯片中的所得器件进行了测试。
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